Epitaxy of Aluminium Films on Semiconductors by Ionized Cluster Beam
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beamJournal of Applied Physics, 1984
- Growth of III–V semiconductors by molecular beam epitaxy and their propertiesThin Solid Films, 1983
- Vaporized-metal cluster formation and effect of kinetic energy of ionized clusters on film formationThin Solid Films, 1982
- VLSI Metallization: Some problems and trendsJournal of Vacuum Science and Technology, 1981
- Effect of Growth Temperature on Si MBE FilmJapanese Journal of Applied Physics, 1981
- Crystalline and Electrical Characteristics of Silicon Films Deposited by Ionized-Cluster-BeamsJapanese Journal of Applied Physics, 1980
- Thin Films—Interdiffusion and ReactionsJournal of the Electrochemical Society, 1979
- Evolution and Current Status of Aluminum MetallizationJournal of the Electrochemical Society, 1976
- The electrical effect on Schottky barrier diodes of Si crystallization from Al–Si metal filmsApplied Physics Letters, 1974
- Constitution of Binary AlloysJournal of the Electrochemical Society, 1958