The electrical effect on Schottky barrier diodes of Si crystallization from Al–Si metal films
- 1 November 1974
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (9) , 524-526
- https://doi.org/10.1063/1.1655575
Abstract
The barrier height of n‐Si Schottky contacts made with Si‐doped Al metallization is observed to vary from 0.79±0.02 V to 0.89±0.02 V after heat treatments at temperatures from 400 to 550°C. Identical diodes made with pure Al metallization have φB =0.68±0.02 V. The scanning electron microscope in the electron‐beam‐induced‐current mode is used to show that the upward shift in φB is due to a thin layer of p ‐doped Si, probably continuous, which is grown from the Al–Si metallization on the n contacts. The discretely distributed Si mesas and precipitates reported by other investigators as crystallizing out of the metallization are observed also, but are believed to play a limited electrical role.Keywords
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