REM study of high index Si(5 5 12) flat surfaces
- 10 March 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 348 (3) , 335-343
- https://doi.org/10.1016/0039-6028(95)01034-3
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- A Stable High-Index Surface of Silicon: Si(5 5 12)Science, 1995
- Faceting, tricriticality, and attractive interactions between steps in the orientational phase diagram of silicon surfaces between [113] and [55 12]Surface Science, 1995
- Quasiperiodic Nanoscale Faceting of High-Index Si SurfacesPhysical Review Letters, 1995
- Structure of high index clean Si surface studied by REMPhysica Status Solidi (a), 1994
- Atomic Structure of Clean Si(113) Surfaces: Theory and ExperimentPhysical Review Letters, 1994
- Tricriticality in the orientational phase diagram of stepped Si(113) surfacesPhysical Review Letters, 1994
- REM observations of Si(hhk) surfaces and their vicinal surfacesSurface Science, 1993
- High-temperature scanning-tunneling-microscopy observation of phase transitions and reconstruction on a vicinal Si(111) surfacePhysical Review B, 1993
- Atomic structure of Si and Ge surfaces: Models for (113), (115), and stepped (001) vicinal surfacesPhysical Review B, 1990
- REM Observation on Conversion between Single-Domain Surfaces of Si(001) 2×1 and 1×2 Induced by Specimen Heating CurrentJapanese Journal of Applied Physics, 1989