REM Observation on Conversion between Single-Domain Surfaces of Si(001) 2×1 and 1×2 Induced by Specimen Heating Current

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Abstract
A current-induced conversion between Si(001)2×1 and 1×2 surfaces is observed in situ by ultrahigh-vacuum reflection electron microscopy. When the specimen is annealed with a certain current above 700°C, the surface is composed of two domains divided by single-height steps, but one type of domain is much wider than the other. When the current direction is reversed, narrow terraces widen their areas as a result of movements of higher side steps to the higher side and slight movements of lower side steps to the lower side. The wider terraces reduce their width. The process is quicker at higher temperature. It was found that the type of major domain is determined on the basis of whether the current is in the step-up or the step-down direction.

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