547-GHz$f_t$In$_0.7$Ga$_0.3$As–In$_0.52$Al$_0.48$As HEMTs With Reduced Source and Drain Resistance
- 4 May 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 25 (5) , 241-243
- https://doi.org/10.1109/led.2004.826543
Abstract
We fabricated 30-nm gate pseudomorphic channel In/sub 0.7/Ga/sub 0.3/As-In/sub 0.52/Al/sub 0.48/As high electron mobility transistors (HEMTs) with reduced source and drain parasitic resistances. A multilayer cap structure consisting of Si highly doped n/sup +/-InGaAs and n/sup +/-InP layers was used to reduce these resistances while enabling reproducible 30-nm gate process. The HEMTs also had a laterally scaled gate-recess that effectively enhanced electron velocity, and an adequately long gate-channel distance of 12nm to suppress gate leakage current. The transconductance (g/sub m/) reached 1.5 S/mm, and the off-state breakdown voltage (BV/sub gd/) defined at a gate current of -1 mA/mm was -3.0 V. An extremely high current gain cutoff frequency (f/sub t/) of 547 GHz and a simultaneous maximum oscillation frequency (f/sub max/) of 400 GHz were achieved: the best performance yet reported for any transistor.Keywords
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