High-voltage (600 to 3 kV) silicon carbide diode development
- 13 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1253-1257
- https://doi.org/10.1109/apec.2001.912526
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar+ implantationJournal of Applied Physics, 2000
- SiC device edge termination using finite area argon implantationIEEE Transactions on Electron Devices, 1997