Structural Effects in Al(111)/Si(111) Heteroepitaxy by Partially Ionized Beam Deposition α
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 116, 465-470
- https://doi.org/10.1557/proc-116-485
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A high ionization efficiency source for partially ionized beam depositionJournal of Vacuum Science & Technology A, 1988
- Nonconformal Al via filling and planarization by partially ionized beam deposition for multilevel interconnectionIEEE Electron Device Letters, 1987
- Channeling study of structural effects at the Al(111)/Si(111) interface formed by ionized cluster beam depositionApplied Physics Letters, 1987
- Monte Carlo calculation for structural modifications in ion-assisted thin film deposition due to thermal spikesJournal of Vacuum Science & Technology A, 1986
- Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beamJournal of Applied Physics, 1984
- Lattice match: An application to heteroepitaxyJournal of Applied Physics, 1984
- A model of sputtering from spikesApplied Physics A, 1982