High temperature reaction and defect chemistry at the Si/SiO2 interface
- 1 October 1987
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 30 (1-4) , 25-31
- https://doi.org/10.1016/0169-4332(87)90069-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Acceleration Factors for the Decomposition of Thermally Grown SiO2 FilmsJournal of the Electrochemical Society, 1987
- Defect formation in thermal SiO2 by high-temperature annealingApplied Physics Letters, 1986
- High-Temperature SiDecomposition at the Si/Si InterfacePhysical Review Letters, 1985
- High temperature annealing behavior of electron traps in thermal SiO2Solid-State Electronics, 1984
- Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2Journal of the Electrochemical Society, 1982
- Comparative study of annealed neon-, argon-, and krypton-ion implantation damage in siliconJournal of Applied Physics, 1978
- The high-temperature oxidation, reduction, and volatilization reactions of silicon and silicon carbideOxidation of Metals, 1972