Studies on single- and multi-layer InAsN quantum dots grown by solid-source molecular beam epitaxy

This publication has 17 references indexed in Scilit:

• High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy
  IEEE Photonics Technology Letters, 2000
• Band Anticrossing in GaInNAs Alloys
  Physical Review Letters, 1999
• Effect of matrix on InAs self-organized quantum dots on InP substrate
  Applied Physics Letters, 1998
• GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
  Japanese Journal of Applied Physics, 1996
• Radiative recombination in type-II GaSb/GaAs quantum dots
  Applied Physics Letters, 1995
• Optical investigation of the self-organized growth of InAs/GaAs quantum boxes
  Journal of Crystal Growth, 1995
• Nanoscale InP islands embedded in InGaP
  Applied Physics Letters, 1995
• Critical layer thickness for self-assembled InAs islands on GaAs
  Physical Review B, 1994
• Visible photoluminescence from N-dot ensembles and the linewidth of ultrasmall ${\mathrm{Al}}_{\mathit{y}}$${\mathrm{In}}_{1\mathrm{-}\mathit{y}}$As/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As quantum dots
  Physical Review B, 1994
• Multidimensional quantum well laser and temperature dependence of its threshold current
  Applied Physics Letters, 1982