Temperature dependence of solid-vapor compositional relation in epitaxial growth of GaAsxSb1-x by low-pressure metalorganic chemical vapor deposition
- 2 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 82-86
- https://doi.org/10.1016/0022-0248(94)91032-4
Abstract
No abstract availableKeywords
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- The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimonyJournal of Electronic Materials, 1982