The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimony
- 1 November 1982
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 11 (6) , 1001-1010
- https://doi.org/10.1007/bf02658912
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Characterization of organometallic VPE grown GaAs and AlGaAs for solar cell applicationsJournal of Crystal Growth, 1981
- Recollections and reflections of MO-CVDJournal of Crystal Growth, 1981
- The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenicJournal of Electronic Materials, 1980
- The trend of deep states in organometallic vapor-phase epitaxial GaAs with varying As/Ga ratiosApplied Physics Letters, 1980
- Investigation of Two‐ and Three‐Phase Fields in the Ga‐As‐Sb SystemJournal of the Electrochemical Society, 1980
- Organometallic VPE growth of AlxGa1−xAsJournal of Electronic Materials, 1979
- Growth and Structure of Silicon FibersJournal of the Electrochemical Society, 1979
- GaAs1-xSbx(0.3<x<0.9) Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1977
- Phase diagram and lattice parameter data for the GaAsySb1−y systemJournal of Electronic Materials, 1973