Characterization of organometallic VPE grown GaAs and AlGaAs for solar cell applications
- 31 December 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (3) , 517-525
- https://doi.org/10.1016/0022-0248(81)90109-3
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenicJournal of Electronic Materials, 1980
- Use of trimethylantimony and trimethylarsenic for organometallic v.p.e. growth of GAAs 1 - y Sb y and Ga 1 - x In x AsElectronics Letters, 1980
- GaAs m.e.s.f.e.t. prepared by organometallic chemical vapour depositionElectronics Letters, 1979
- Growth of semi-insulating epitaxial gallium arsenide by chromium doping in the metal-alkyl+hydride systemJournal of Crystal Growth, 1978
- GaAs reflection photocathodes grown by metal alkyl vapor phase epitaxyApplied Physics Letters, 1976
- Heteroepitaxial InAs Grown on GaAs from Triethylindium and ArsineJournal of the Electrochemical Society, 1974
- The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substratesJournal of Crystal Growth, 1972
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969
- Growth of Single Crystal GaP from Organometallic SourcesJournal of the Electrochemical Society, 1969
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968