GaAs reflection photocathodes grown by metal alkyl vapor phase epitaxy
- 1 February 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (3) , 113-115
- https://doi.org/10.1063/1.88674
Abstract
GaAs reflection photocathodes grown by vapor‐phase epitaxy using trimethyl gallium and arsine have been activated to a maximum sensitivity of 1150 μA 1m−1. The material is of high quality and has diffusion lengths and surface escape probabilities which are comparable with those measured for liquid‐phase epitaxial material.Keywords
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