Use of Auger Electron Spectroscopy in Determining the Effect of Carbon and Other Surface Contaminants on GaAs–Cs–O Photocathodes
- 1 February 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (2) , 802-804
- https://doi.org/10.1063/1.1658753
Abstract
Auger electron spectroscopy has been used to measure quantitatively the amount of carbon contamination on GaAs–Cs–O photosurfaces. It appears that approximately one monolayer of carbon is sufficient to reduce the photoyield to zero.This publication has 11 references indexed in Scilit:
- Auger Electron Spectroscopy of Clean Gallium ArsenideJournal of Applied Physics, 1970
- Transport Properties of GaAs Obtained from Photoemission MeasurementsPhysical Review B, 1969
- Resolution and Sensitivity Considerations of an Auger Electron Spectrometer Based on Display LEED OpticsReview of Scientific Instruments, 1969
- Determination of Surface Structures using LEED and Energy Analysis of Scattered ElectronsJournal of Applied Physics, 1969
- Auger Electron Spectroscopy of fcc Metal SurfacesJournal of Applied Physics, 1968
- Photoemission from GaAs-Cs-OJournal of Physics D: Applied Physics, 1968
- Improved photoemitters using GaAs and InGaAsProceedings of the IEEE, 1968
- Use of LEED Apparatus for the Detection and Identification of Surface ContaminantsJournal of Applied Physics, 1967
- GaAs-Cs: A new type of photoemitterSolid State Communications, 1965
- Backscattering of Kilovolt Electrons from SolidsPhysical Review B, 1954