Measurement of minority carrier lifetime and diffusion length in silicon epitaxial layers by means of the photocurrent technique
- 31 August 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (8) , 999-1003
- https://doi.org/10.1016/0038-1101(78)90175-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977
- Measurement of minority carrier lifetime profiles in siliconSolid-State Electronics, 1977
- Minority carrier reflecting properties of semiconductor high-low junctionsSolid-State Electronics, 1975
- Lifetime measurements in silicon epitaxial materialsSolid-State Electronics, 1975
- Interpretation of steady-state surface photovoltage measurements in epitaxial semiconductor layersSolid-State Electronics, 1972
- Measurement of spatial variations of the carrier lifetime in silicon power devicesPhysica Status Solidi (a), 1972
- On the separation of bulk and surface components of lifetime using the pulsed MOS capacitorSolid-State Electronics, 1970
- Measurement of Carrier Lifetimes in Germanium and SiliconJournal of Applied Physics, 1955
- Theory of Relation between Hole Concentration and Characteristics of Germanium Point ContactsBell System Technical Journal, 1950