Field-effect transistor with polyaniline and poly(2-alkylaniline) thin film as semiconductor
- 31 May 1997
- journal article
- Published by Elsevier in Synthetic Metals
- Vol. 88 (2) , 101-107
- https://doi.org/10.1016/s0379-6779(97)80887-9
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Fabrication and Characteristics of Schottky Gated Field Effect Transistors Utilizing Poly(1,4-naphthalene vinylene) and Poly(p-phenylene vinylene)Japanese Journal of Applied Physics, 1992
- Electronic and optical studies with Langmuir-Blodgett transistorsThin Solid Films, 1992
- Surface field effect of polyaniline filmSynthetic Metals, 1991
- Field-effect conduction in polyalkylthiophenesSynthetic Metals, 1991
- A field-effect transistor based on conjugated alpha-sexithienylSolid State Communications, 1989
- New semiconductor device physics in polymer diodes and transistorsNature, 1988
- Field-effect mobility of poly(3-hexylthiophene)Applied Physics Letters, 1988
- Polythiophene field-effect transistor: Its characteristics and operation mechanismSynthetic Metals, 1988
- Macromolecular electronic device: Field-effect transistor with a polythiophene thin filmApplied Physics Letters, 1986
- CHEMICALLY PREPARED POLY(N-METHYLPYRROLE) THIN FILM. ITS APPLICATION TO THE FIELD-EFFECT TRANSISTORChemistry Letters, 1986