Low-Temperature Growth of Polycrystalline AlN Films by Microwave Plasma CVD
- 1 February 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (2A) , L358
- https://doi.org/10.1143/jjap.29.l358
Abstract
The growth of polycrystalline AlN film at a rate of 60 nm·min-1 was accomplished at a substrate temperature of 550°C by a coaxial-line-type microwave plasma chemical vapor deposition (CVD) method using the AlBr3-H2-N2 gas system. Excellent c-axis orientation was observed on the film having a half-width rocking curve of (001)AlN (Δθ50) of 2.1 degrees. No carbon or bromine was detected by the AES measurements.Keywords
This publication has 5 references indexed in Scilit:
- Plasma-enhanced chemical vapour deposition of AlN coatings on graphite substratesThin Solid Films, 1987
- Reflection high energy electron diffraction and X-ray studies of AlN films grown on Si(111) and Si(001) by organometallic chemical vapour depositionThin Solid Films, 1984
- Microwave Plasma CVD System for the Fabrication of Thin Solid FilmsJapanese Journal of Applied Physics, 1982
- Zero Temperature Coefficient Surface-Acoustic-Wave Delay Lines on AlN/Al2O3Japanese Journal of Applied Physics, 1982
- Topotactical reactions with ferrimagnetic oxides having hexagonal crystal structures—IJournal of Inorganic and Nuclear Chemistry, 1959