Microwave Plasma CVD System for the Fabrication of Thin Solid Films
- 1 August 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (8A) , L470
- https://doi.org/10.1143/jjap.21.l470
Abstract
This study was concerned with the development of a process for the deposition of thin-films from a microwave plasma of semiconductor materials. A coaxial line type microwave CW discharge was used to create uniform plasmas and a-Si films were fabricated from Ar gas containing 10% SiH4. The X-ray diffraction patterns shown that the fabricated films, where the microwave power is large, are crystallized and the structure of the other films is amorphous.Keywords
This publication has 3 references indexed in Scilit:
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- Generation of large volume microwave plasmasJournal of Physics E: Scientific Instruments, 1973
- Microwave Discharge Cavities Operating at 2450 MHzReview of Scientific Instruments, 1965