Investigation of optically gated silicon controlled rectifiers operating at 77k
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 437-440
- https://doi.org/10.1109/ppc.1989.767517
Abstract
This paper discusses the investigation of optically gated thyristors operated at 77K. The objective of this experiment is to increase the switching speed of large diameter thyristors by optically generating carriers uniformly in the base region in a time equal to the transverse optical transit time of the device. This paper discusses the experimental arrangement and the initial results. Measurements of the switching speed versus voltage, and the switching speed versus anode current are presented for a 5 /spl Omega/ and a 1/spl Omega/ system.Keywords
This publication has 1 reference indexed in Scilit:
- Experimental demonstration of high-power fast-rise-time switching in silicon junction semiconductorsApplied Physics Letters, 1976