A hydrogen-related defect with a mid-gap level in Si and a modified method to precisely determine the energy level near the mid-gap with deep level transient spectroscopy data
- 1 August 1988
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 131 (1) , 33-37
- https://doi.org/10.1016/0375-9601(88)90629-9
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Effect of thermal pretreatment on electron irradiation induced defects in hydrogen-grown siliconApplied Physics Letters, 1987
- Localized vibrational mode infrared absorption of BH pair in siliconSolid State Communications, 1985
- Field drift of the hydrogen-related, acceptor-neutralizing defect in diodes from hydrogenated siliconApplied Physics Letters, 1985
- Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal siliconPhysical Review B, 1985
- The convergent effect of the annealing temperatures of electron irradiated defects in FZ silicon grown in hydrogenSolid State Communications, 1985
- Hydrogen localization near boron in siliconApplied Physics Letters, 1985
- Three kinds of hydrogen-related electron irradiated defects in silicon grown in hydrogenChinese Physics Letters, 1985
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Hydrogen passivation of point defects in siliconApplied Physics Letters, 1980
- Bonding and thermal stability of implanted hydrogen in siliconJournal of Electronic Materials, 1975