Effects of package geometry, materials, and die design on energy dependence of pMOS dosimeters
- 1 February 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 42 (1) , 33-40
- https://doi.org/10.1109/23.364879
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devicesIEEE Transactions on Nuclear Science, 1991
- An Evaluation of Low-Energy X-Ray and Cobalt-60 Irradiations of MOS TransistorsIEEE Transactions on Nuclear Science, 1987
- Theory of response of radiation sensing field effect transistorsJournal of Applied Physics, 1985
- Dose Enhancement Effects in Semiconductor DevicesIEEE Transactions on Nuclear Science, 1982
- Packaging Effects on Transistor Radiation ResponseIEEE Transactions on Nuclear Science, 1975
- The space-charge dosimeterNuclear Instruments and Methods, 1974