Semiconductors at cryogenic temperatures
- 1 January 1964
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 52 (10) , 1092-1104
- https://doi.org/10.1109/proc.1964.3296
Abstract
A review is made of those physical properties of semiconductors which are relevant to device operation at cryogenic temperatures. These include carrier density, mobility, hot carrier phenomena, recombination and trapping, and the performance of p-n junctions. A description is then given of the cryogenic operation of semiconductor devices together with an assessment of future possibilities.Keywords
This publication has 59 references indexed in Scilit:
- Solid state plasma phenomenaBritish Journal of Applied Physics, 1964
- Negative Resistance and Impact Ionization Impurities in-Type Indium AntimonidePhysical Review B, 1964
- Temperature Dependence of Indirect Interband Tunneling in GermaniumPhysical Review B, 1963
- Electroluminescent devices using carrier injection in gallium phosphideSolid-State Electronics, 1963
- Injection electroluminescenceSolid-State Electronics, 1961
- Compound cryosars for low-temperature computer memoriesSolid-State Electronics, 1961
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960
- Electrical Conduction in n-Type InSb between 2 k and 300 kProceedings of the Physical Society, 1959
- The thermal conductivity of germanium and silicon between 2 an d 300° KProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952