Electroluminescent devices using carrier injection in gallium phosphide
- 1 March 1963
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 6 (2) , 95-102
- https://doi.org/10.1016/0038-1101(63)90002-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Injection electroluminescence at p-n junctions in zinc-doped gallium phosphideJournal of Physics and Chemistry of Solids, 1962
- Some Properties of p-n Junctions in GaPJournal of Applied Physics, 1961
- Electroluminescence atp-nJunctions in Gallium PhosphideJournal of Applied Physics, 1961
- The Preparation and Floating Zone Processing of Gallium PhosphideJournal of the Electrochemical Society, 1961
- Breakdown and Light Emission in Gallium Phosphide Diodes †Journal of Electronics and Control, 1959
- Bimolecular Electroluminescent Transitions in GaPPhysical Review Letters, 1959
- Electroluminescence of GaPPhysical Review B, 1955
- Notizen: Über die Halbleitereigenschaften von GalliumphosphidZeitschrift für Naturforschung A, 1954
- Injected Light Emission of Silicon Carbide CrystalsPhysical Review B, 1951
- CII.Luminous carborundum detector and detection effect and oscillations with crystalsJournal of Computers in Education, 1928