Novel method for minority-carrier mobility measurement using photoconductance decay with chemically passivated and plasma damaged surfaces

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Abstract
A method for measuring minority‐carrier mobility using microwave‐detected photoconductance decay without requiring bulk lifetime, estimates is presented. Three different measurements on a single sample yield values for surface recombination velocity, bulk lifetime, and diffusivity. For each measurement the surface conditions of the sample are changed, allowing extraction of different parameters. The usefulness of 0.08 molar ethanol/iodine solution as a means of achieving such good surface passivation is demonstrated. The following procedure was used to achieve high surface recombination. A CF4 plasma surface etch was shown to achieve the same level of surface damage as mechanical abrasion. The advantage of the new method is that it completely eliminates the chance of breaking samples during the abrasion process, which is of particular advantage for thin samples. The new experimental method for minority‐carrier mobility measurement is evaluated using carrier lifetime measurements made on a commercially available Leo Giken ‘‘Wafer‐τ’’ lifetime tester.