Measurement considerations for zero-field time-of-flight studies of minority carrier diffusion in III–V semiconductors

This publication has 17 references indexed in Scilit:

• Temperature dependence of minority-carrier mobility and recombination time in p-type GaAs
  Applied Physics Letters, 1991
• Zero-Field Time-of-Flight Measurements of Electron Diffusion in P⁺-GaAs
  Japanese Journal of Applied Physics, 1991
• Experimental values for the hole diffusion coefficient and collector transit velocity in P-n-p AlGaAs/GaAs HBTs
  IEEE Electron Device Letters, 1991
• Velocity electric field relationship for minority electrons in highly doped p-GaAs
  Applied Physics Letters, 1990
• Minority-electron mobility in p-type GaAs
  Journal of Applied Physics, 1989
• Electron mobility in p-type GaAs
  Applied Physics Letters, 1988
• Electron mobility in p-GaAs by time of flight
  Applied Physics Letters, 1987
• Time-of-flight measurements of minority-carrier transport in p-silicon
  Applied Physics Letters, 1986
• Time-of-flight studies of minority-carrier diffusion in AlxGa1−xAs homojunctions
  Applied Physics Letters, 1986
• The effect of electron-hole scattering on minority carrier transport in bipolar transistors
  Solid-State Electronics, 1985