Electron mobility in p-type GaAs
- 22 February 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (8) , 654-656
- https://doi.org/10.1063/1.99395
Abstract
The mobility of electrons in p‐type GaAs, μPn has been determined by measuring the common emitter cutoff frequency fT of heterojunction bipolar transistors with a wide, uniformly doped base. At 295 K, μPn =1150 cm2/(V s) is found for a hole concentration of 3.6×1018 cm−3. At 77 K, μPn =6000 cm2/(V s). The room‐temperature value is considerably smaller and the 77 K value considerably larger than the electron mobility in comparably doped n‐type material.Keywords
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