Measurement of minority carrier lifetime in GaAs and GaAs1−xPx with an intensity-modulated electron beam
- 30 April 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (4) , 295-304
- https://doi.org/10.1016/0038-1101(82)90138-1
Abstract
No abstract availableKeywords
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