Theory of diffusion constant-, lifetime- and surface recombination velocity-measurements with the scanning electron microscope
- 31 July 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (7) , 957-964
- https://doi.org/10.1016/0038-1101(78)90294-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Theory of life time measurements with the scanning electron microscope: Steady stateSolid-State Electronics, 1976
- Measurement of the Lifetime of Minority Carriers in Semiconductors with a Scanning Electron MicroscopeJapanese Journal of Applied Physics, 1965
- Injected Current Carrier Transport in a Semi-Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination VelocitiesJournal of Applied Physics, 1955