The determination of transport parameters of minority carriers in n–p junctions by means of an electron microscope. Critique of recent developments
- 1 February 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (2) , 177-182
- https://doi.org/10.1016/0038-1101(80)90155-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Analysis of the interaction of an electron beam with a solar cell—ISolid-State Electronics, 1978
- Theory of diffusion constant-, lifetime- and surface recombination velocity-measurements with the scanning electron microscopeSolid-State Electronics, 1978
- Determination of minority-carrier lifetime and surface recombination velocity with high spacial resolutionIEEE Transactions on Electron Devices, 1977
- Theory of life time measurements with the scanning electron microscope: Steady stateSolid-State Electronics, 1976