Time-of-flight measurements of minority-carrier transport in p-silicon
- 1 December 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (22) , 1540-1541
- https://doi.org/10.1063/1.97275
Abstract
The electric field dependence of electron mobilities in p‐type silicon with doping density of 4.5×1016 cm−3 at room temperature was measured using a time‐of‐flight technique. It was found that the electron mobility at zero field is very close to that in n‐type silicon of equivalent doping density; however, it decreases rapidly with electric field in a range from 0 to 0.2 kV/cm and more gradually at higher fields. The effect is attributed to the electron‐hole scattering.Keywords
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