An empirical fit to minority hole mobilities

1 July 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 5 (7) , 231-233
https://doi.org/10.1109/edl.1984.25900

Abstract

Minority hole mobilities in highly-doped n-type silicon are determined by electron-beam-induced current measurements. They are used in conjunction with existing data taken from the literature to derive an empirical expression for the minority hole moblility as a function of majority-carrier density 10¹⁴cm^-3≤ ND≤ cm^-3. It is anticipated that this empirical fit will be valuable in device modeling.

Keywords

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