Measurement of hole mobility in heavily doped n-type silicon
- 1 March 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (3) , 168-171
- https://doi.org/10.1109/edl.1986.26333
Abstract
Accurate measurements of the mobility (and diffusion coefficient) of minority-carrier holes in Si:P with doping in the 1019cm-3range have been done. The technique employed the measurement of diffusion length by means of lateral bipolar transistors of varied base widths, and the measurement of minority-carrier lifetime on the same wafers from the time decay of luminescence radiation after excitation with a short laser pulse. Minority-carrier hole mobility is found to be about a factor of two higher than the mobility of holes as majority carriers in p-type Si of identical doping levels.Keywords
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