Zero-Field Time-of-Flight Measurements of Electron Diffusion in P+-GaAs
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2A) , L135
- https://doi.org/10.1143/jjap.30.l135
Abstract
Minority electron diffusivities in p+-GaAs-doped N A≃1.4×1018 and ∼1019 cm-3 have been measured in zero-field conditions with an extension of the zero-field time-of-flight technique. Extension of the technique to make it applicable to heavily doped p+-GaAs is described and zero-field data are discussed. Unexpectedly, majority carrier drag effects are not evident in a comparison of this data with recently reported high-field data. Low zero-field mobility of electrons in p+-GaAs has important implications for high-speed devices such as heterojunction bipolar transistors.Keywords
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