On the reverse IV-characteristics of Schottky diodes on n-GaN
- 1 January 1997
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10794700,p. 227-235
- https://doi.org/10.1109/cornel.1997.649362
Abstract
In this investigation the I/V and C/V characteristics of Schottky diodes on uniformly n-doped GaN grown on sapphire are analyzed in the bias and temperature regime. Since the barrier height of metal-GaN contacts depends strongly on the work function differences, two Schottky barrier materials with high work function difference to GaN and thus high barrier height have been considered: (A) Pt with a barrier height to n-doped GaN of approx. /spl Phi//sub B/=1.1 eV and (B) degenerately p/sup +/-doped Si in a "Schottky barrier-like" configuration.Keywords
This publication has 7 references indexed in Scilit:
- Low pressure metalorganic vapor phase epitaxial growth of GaN/GaInN heterostructuresSolid-State Electronics, 1997
- GaN FETs for microwave and high-temperature applicationsSolid-State Electronics, 1997
- Electrical conduction in platinum–gallium nitride Schottky diodesJournal of Applied Physics, 1996
- Schottky barrier properties of various metals on n-type GaNSemiconductor Science and Technology, 1996
- Near-ideal platinum-GaN Schottky diodesElectronics Letters, 1996
- High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaNApplied Physics Letters, 1996
I V characteristics of epitaxial Schottky Au barrier diode on p+ diamond substrateDiamond and Related Materials, 1995