I V characteristics of epitaxial Schottky Au barrier diode on p+ diamond substrate
- 1 May 1995
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 4 (5-6) , 661-665
- https://doi.org/10.1016/0925-9635(94)05237-9
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- High current p/p/sup +/-diamond Schottky diodeIEEE Electron Device Letters, 1994
- Epitaxial diamond Schottky diode on p+-substratePublished by SPIE-Intl Soc Optical Eng ,1994
- High-conductance, low-leakage diamond Schottky diodesApplied Physics Letters, 1993
- High Temperature Rectifying Contacts Using Heteroepitaxial Ni Films on Semiconducting DiamondJapanese Journal of Applied Physics, 1991
- High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial FilmsJapanese Journal of Applied Physics, 1990
- Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition MethodJapanese Journal of Applied Physics, 1990
- Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial FilmJapanese Journal of Applied Physics, 1989