High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A) , L2163
- https://doi.org/10.1143/jjap.29.l2163
Abstract
High-voltage Schottky diodes have been fabricated on diamond epitaxial films with the structure: metal/undoped diamond/p+-type diamond. The films were epitaxially grown on synthesized single-crystal diamonds (100) by microwave plasma-assisted chemical vapor deposition (CVD) using H2 and CH4. B2H6 was used at B2H6/CH4=167 ppm for p+ diamond. Al Schottky electrodes and Ti ohmic electrodes were formed by an e-beam evaporation method and a thermal evaporation method, respectively. The forward current was independent of temperature because of the Fermi degeneracy in p+-type diamond. These diodes had a breakdown voltage of 520 V.Keywords
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