Correlation of light-induced changes with hydrogen content in hydrogenated amorphous silicon films
- 10 June 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (23) , 2669-2671
- https://doi.org/10.1063/1.104802
Abstract
By annealing H-rich intrinsic a-Si:H films at 340 °C in a hydrogen atmosphere, we have prepared a series of samples with varying hydrogen content (CH), but essentially constant photoconductivity, Urbach energy, and microstructure. In this way, we have been able to eliminate some of the interfering factors contributing to the light-induced effect, thus enabling the influence of CH to be determined. A strong correlation is found between the stability and CH, supporting the involvement of hydrogen in the light-induced mechanism.Keywords
This publication has 16 references indexed in Scilit:
- Role of hydrogen complexes in the metastability of hydrogenated amorphous siliconPhysical Review B, 1990
- Electronic stability of the reactively sputtered hydrogenated amorphous silicon thin films: The effect of hydrogen contentJournal of Vacuum Science & Technology A, 1990
- The Influence of the Si-H2 Bond on the Light-Induced Effect in a-Si Films and a-Si Solar CellsJapanese Journal of Applied Physics, 1989
- Microstructure and the light-induced metastability in hydrogenated amorphous siliconApplied Physics Letters, 1988
- Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:HJapanese Journal of Applied Physics, 1988
- Hydrogen microstructure in amorphous hydrogenated siliconPhysical Review B, 1987
- Multiple-Quantum NMR Study of Clustering in Hydrogenated Amorphous SiliconPhysical Review Letters, 1986
- The Role of Hydrogen in the Staebler-Wronski Effect of a-Si:HJapanese Journal of Applied Physics, 1985
- Phonons in polysilane alloysPhysical Review B, 1982
- Hydrogen evolution and defect creation in amorphous Si: H alloysPhysical Review B, 1979