Preparation and properties of electrodeposited indium tin oxide/SnO2/CdTe and indium tin oxide/SnO2/CdS/CdTe solar cells

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Abstract
Cadmium telluride‐based solar cells have been prepared as indium tin oxide (ITO)/SnO2/CdTe and indium tin oxide/SnO2/CdS/CdTe structures where CdS and CdTe were prepared by an electrodeposition technique. Both open circuit voltage and short circuit current of ITO/SnO2/CdTe cells were higher than that of ITO/SnO2/CdS/CdTe cells. The spectral response measurement showed that the current collection was higher in the ITO/SnO2/CdTe cell relative to the ITO/SnO2/CdS/CdTe cell. Current‐voltage temperature measurements indicated that the junction transport could be controlled by recombination or thermally assisted tunneling in the ITO/SnO2/CdTe cell, whereas tunneling could be the dominant junction transport mechanism in the ITO/SnO2/CdS/CdTe cell. Activation energies of ITO/SnO2/CdTe and ITO/SnO2/CdS/CdTe cells were 0.60 and 0.76 eV, respectively. The values of the built‐in potential, Vbi calculated from the measurement of open circuit voltage with temperature were 1.41 and 1.5 eV for ITO/SnO2/CdTe and ITO/SnO2/CdS/CdTe cells, respectively, whereas from Mott–Schottky plots they were 1.1 and 0.95 eV, respectively.