Hot-electron variable effective-mass in silieon
- 1 August 1968
- journal article
- Published by Springer Nature in Il Nuovo Cimento B (1971-1996)
- Vol. 56 (2) , 343-348
- https://doi.org/10.1007/bf02710162
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Hot-electron drift mobility in silicon between 77 °K and 300 °KIl Nuovo Cimento B (1971-1996), 1968
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967
- Hot-carrier drift velocity in siliconIl Nuovo Cimento B (1971-1996), 1967
- Cyclotron resonance of electrons in silicon at temperatures up to 200 KProceedings of the Physical Society, 1966
- Electronic Spectra of Crystalline Germanium and SiliconPhysical Review B, 1964
- Determination of Free Electron Effective Mass of n-Type SiliconJournal of Applied Physics, 1963
- Specific Heat of Germanium and Silicon at Low TemperaturesPhysical Review B, 1959
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958