Formation of PtSi in the presence of Al
- 1 March 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (5) , 1864-1868
- https://doi.org/10.1063/1.338031
Abstract
The formation of Pt silicides in the presence of Al is studied using Al/Pt/Si structures with different layer thicknesses of Al. Both the Pt-Si and Pt-Al reactions take place simultaneously, starting around 200 °C, with the formation of PtSi and PtAl2 completed at 400 °C. With an equal layer thickness for all three layers, the two alloys formed stay in contact with each other in a stable form up to about 500 °C. With a layer thickness of Al twice or more that of Pt and Si, the PtSi layer is completely converted to PtAl2 at 450 °C. The released Si from such a reaction is mostly located under the PtAl2 formed. The relation between these results and the unstable PtSi/Al contact in devices is discussed.This publication has 33 references indexed in Scilit:
- PtSi Contact Metallurgy Using Sputtered Pt and Different Annealing ProcessesJournal of the Electrochemical Society, 1986
- The use of titanium-based contact barrier layers in silicon technologyThin Solid Films, 1982
- Interaction of evaporated palladium and titanium films with single-crystal siliconThin Solid Films, 1980
- Resistivity of bias-sputtered TiW filmsThin Solid Films, 1979
- Aluminum/nickel silicide contacts on siliconThin Solid Films, 1978
- Application of Ti: W barrier metallization for integrated circuitsThin Solid Films, 1978
- Radioactive silicon tracer studies of the formation of CrSi2on Pd2Si and PtSiPhilosophical Magazine A, 1978
- Study of Al/Pd2Si contacts on SiJournal of Vacuum Science and Technology, 1977
- Studies of the Ti‐W Metallization System on SiJournal of the Electrochemical Society, 1976
- Electrical and mechanical features of the platinum silicide-aluminum reactionJournal of Applied Physics, 1973