Raman Scattering in Si, Ge, and Sn
- 15 April 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 3 (8) , 2504-2507
- https://doi.org/10.1103/physrevb.3.2504
Abstract
The one-phonon Raman scattering of Si, Ge, and Sn at room dry-ice, and liquid-nitrogen temperatures is reported. The Raman frequencies obtained ( optical phonon) decrease with increasing temperature. The room-temperature results for Sn are in excellent agreement with recent neutron-scattering data; such data are not available for Ge and Si. In these cases, the Raman frequencies obtained are compared with lattice-dynamical calculations based on the reststrahlung frequencies and the elastic constants. The Raman lines observed show considerable sharpening (a factor of 2 to 3) between room and liquid-nitrogen temperature. Weaker, possibly two-phonon, spectra have also been observed.
Keywords
This publication has 14 references indexed in Scilit:
- Lattice dynamics of magnesium stannide at room temperatureJournal of Physics and Chemistry of Solids, 1970
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric ConstantPhysical Review B, 1969
- Electronic Structure and Optical Properties of Si, Ge, and SnPhysical Review B, 1969
- Optical Properties of Si, Ge, and Sn from 0.6 to 11.0 eV at 77°KPhysical Review B, 1969
- Electroreflectance Measurements on Si, Ge, and SnPhysical Review B, 1968
- Anharmonic Decay of Optical PhononsPhysical Review B, 1966
- Temperature Dependence of the Far-Infrared Reflectivity of Magnesium StannidePhysical Review B, 1966
- Lattice dynamics of Mg2GeJournal of Physics and Chemistry of Solids, 1965
- Elastic constants and lattice vibration frequencies of Mg2SiJournal of Physics and Chemistry of Solids, 1965
- Infrared Reflectivities of Magnesium Silicide, Germanide, and StannidePhysical Review B, 1963