Valence Band Electronic State of Transition-Metal Silicide TiSi2 Studied by Soft X-Ray Emission Spectroscopy (SXES)
- 1 October 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (10R)
- https://doi.org/10.1143/jjap.29.2014
Abstract
A soft X-ray emission spectrum (SXES) due to a transition from the valence band to an electron excited Si-L2, 3 level for TiSi2, a transition metal silicide, has shown a clear sharp peak at hν, photon energy, ∼98 eV. From the SXES study, it is concluded that a fair amount of the Si s-like electronic state is included in the upper half, especially at the Fermi edge, of the valence band density of state (VB-DOS) of TiSi2. This fact is in clear contrast to dominant proposals given so far, where it is claimed that the upper part of the VB-DOS of TMSi's is constructed only by electronic states due to transition metal(d)-Si(p) hybridization.Keywords
This publication has 7 references indexed in Scilit:
- Electronic structure and bonding properties in TiSi2Zeitschrift für Physik B Condensed Matter, 1990
- Construction of a Soft X-Ray Emission Spectroscopy (SXES) Apparatus and Its Application for Study of Electronic and Atomic Structures of a Multilayer SystemJapanese Journal of Applied Physics, 1990
- Contribution of the Si s Electronic State to the Density of State of CoSi2 at Fermi Energy by Soft X-Ray Emission SpectroscopyJapanese Journal of Applied Physics, 1990
- Photoemission and inverse photoemission of transition-metal silicidesPhysical Review B, 1989
- Microscopic properties and behavior of silicide interfacesSurface Science, 1983
- Self-consistent energy bands and bonding of NiPhysical Review B, 1982
- Electronic states of silicon in Ni-silicides by nuclear magnetic resonanceSolid State Communications, 1980