Impact of Organic Contaminants from the Environment on Electrical Characteristics of Thin Gate Oxides
- 1 May 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (5R) , 2468
- https://doi.org/10.1143/jjap.37.2468
Abstract
We have investigated the impact of organic contaminants from the environment on the electrical characteristics of gate oxides by evaluation of electrical characteristics of metal oxide semiconductor (MOS) capacitors and gas chromatography-mass spectrometry following thermodesorption (TD-GC/MS) analysis of organic species adsorbed on silicon surfaces. It was found that organic contaminants from the environment adsorbed on silicon surfaces deteriorate gate oxide reliability; the increase in both breakdown and infant failure of gate oxides is enhanced by organic contaminants from the environment and depends on gate oxide thickness and the kind of silicon substrate. These results are useful for clarifying the deterioration mechanism of gate oxides caused by organic contaminants on silicon surfaces.Keywords
This publication has 8 references indexed in Scilit:
- Identification and Removal of Trace Organic Contamination on Silicon Wafers Stared in Plastic BoxesJournal of the Electrochemical Society, 1996
- Clarification of Nitridation Effect on Oxide Formation MethodsJapanese Journal of Applied Physics, 1996
- Reliability of in-situ rapid thermal gate dielectrics in deep submicrometer MOSFET'sIEEE Transactions on Electron Devices, 1995
- The electrical properties of sub-5-nm oxynitride dielectrics prepared in a nitric oxide ambient using rapid thermal processingIEEE Electron Device Letters, 1994
- Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide filmsIEEE Electron Device Letters, 1991
- Ultradry annealing after polysilicon electrode formation for improving the TDDB lifetime of ultrathin silicon oxide films in MOS diodesIEEE Electron Device Letters, 1991
- Electrical and physical characteristics of thin nitrided oxides prepared by rapid thermal nitridationIEEE Transactions on Electron Devices, 1987
- Time-dependent-dielectric breakdown of thin thermally grown SiO2filmsIEEE Transactions on Electron Devices, 1985