Reliability of in-situ rapid thermal gate dielectrics in deep submicrometer MOSFET's
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (12) , 2181-2188
- https://doi.org/10.1109/16.477777
Abstract
No abstract availableKeywords
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