Nanometer Pattern Delineation by Electron and Ion Beam Lithography
- 1 March 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (3A) , L141
- https://doi.org/10.1143/jjap.23.l141
Abstract
Nanometer pattern delineation techniques have been investigated using electron and ion beam lithography. About a 20 nm wide resist and Au pattern was formed by 40 keV electron beam exposure and a lift-off technique. For ion beam lithography, about 60 nm wide patterns were formed by 50 keV H+ exposure and by using a thin carbon membrane mask. It was confirmed that a H+ beam exposure gives a very high contrast ratio and a high resolution patterning.Keywords
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