Two different methods of determining electromigration parameters associated with resistance change
- 1 August 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (8) , 1025-1027
- https://doi.org/10.1016/0038-1101(90)90214-y
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A study of electromigration in aluminum and aluminum-silicon thin film resistors using noise techniqueSolid-State Electronics, 1989
- Noise and Grain-Boundary Diffusion in Aluminum and Aluminum AlloysPhysical Review Letters, 1985
- Low-frequency fluctuations in solids:noiseReviews of Modern Physics, 1981
- 1/f noise as a nonstationary process: Experimental evidence and some analytical conditionsJournal of Applied Physics, 1976
- Activation energy for electrotransport in thin aluminum films by resistance measurementsJournal of Physics and Chemistry of Solids, 1976
- RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMSApplied Physics Letters, 1968