Self-aligned 6H-SiC MOSFETs withimproved current drive
- 6 July 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (14) , 1200-1201
- https://doi.org/10.1049/el:19950800
Abstract
Surface-channel n-MOSEET devices in 6H-SiC are fabricated with n+-polysilicon gates on 80 nm thick gate oxide using a self-aligned process. The mobility and subthreshold slope, 40 cm2/Vs and 500 mV/decade, are comparable to MOSFETs fabricated with a non-self-aligned process. These MOSFETs exhibit a saturation drain current of 18 mA/mm at 340°C when the gate is 9 V above threshold. This current density is approximately three times higher than the best self-aligned 6H-SiC MOSFETs reported to date, and approximately five times higher if scaled to the same oxide thickness.Keywords
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