Nonequilibrium characteristics of the gate-controlled diode in 6H-SiC
- 15 March 1994
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (6) , 3205-3207
- https://doi.org/10.1063/1.357017
Abstract
N+‐P gate‐controlled diodes are fabricated in the wide band gap semiconductor 6H‐SiC by thermal oxidation and ion implantation of nitrogen. Room temperature capacitance‐voltage characteristics display a ‘‘hook and ledge’’ hysteresis, which has been observed in Si gate‐controlled diodes at 77 K. In these samples of p‐type doping 2.8×1016 cm−3, the surface state density is about 4×1012 cm−2.This publication has 8 references indexed in Scilit:
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