Specific contact resistance for alloyed Au-Zn contacts on p-type GaxIn1−xPyAs1−y
- 1 May 1980
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (5) , 2933-2934
- https://doi.org/10.1063/1.327966
Abstract
The specific contact resistance for a pulse plated and alloyed Au‐Zn (16 at. % Zn) contact on p‐type Ga0.28In0.72P0.39As0.61 was found to be 3.60.4×10−5 Ω cm2. Results of Rutherford backscattering measurements with 1.8‐MeV 4He+ showed that the alloyed Au moved only ∼1500 Å into the quaternary layer, while In and GaAs were displaced to the surface.This publication has 5 references indexed in Scilit:
- InP-GaxIn1−xAsyP1−y double heterostructure for 1.5 μm wavelengthApplied Physics Letters, 1978
- Concepts of Backscattering SpectrometryPublished by Elsevier ,1978
- 1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room TemperatureJapanese Journal of Applied Physics, 1977
- Pulse Electroplating of High-Resistance Materials, Poorly Contacted Devices, and Extremely Small AreasJournal of the Electrochemical Society, 1971
- Ohmic contacts for GaAs devicesSolid-State Electronics, 1967