Single ion induced multiple-bit upset in IDT 256K SRAMs
- 30 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Advantages of the LBL 88-inch cyclotron ion beams for SEP studiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- On the suitability of non-hardened high density SRAMs for space applicationsIEEE Transactions on Nuclear Science, 1991
- Bevalac ion beam characterizations for single event phenomenaIEEE Transactions on Nuclear Science, 1990
- Non-random single event upset trendsIEEE Transactions on Nuclear Science, 1989
- Measurement of SEU Thresholds and Cross Sections at Fixed Incidence AnglesIEEE Transactions on Nuclear Science, 1987
- On-Orbit Observations of Single Event Upset in Harris HM-6508 1K RAMSIEEE Transactions on Nuclear Science, 1986
- Heavy Ion Induced Upsets in Semiconductor DevicesIEEE Transactions on Nuclear Science, 1985
- Single Event Upset Testing with Relativistic Heavy IonsIEEE Transactions on Nuclear Science, 1984